Combined ultraviolet- and electron-beam lithography with Micro-Resist-Technology GmbH ma-N1400 resist

نویسندگان

چکیده

We present a “mix-and-match” process to create large structures with submicrometer features by combining UV contact lithography and 100 kV electron-beam in single layer of negative-tone resist: Micro-Resist-Technology ma-N1405. The resist is successfully applied for the fabrication an on-chip terahertz spectrometer, where design requires 450 nm wide lines 300 trenches 150 thick niobium-titanium-nitride layer, tolerating errors ±30 nm. use thickness 500 nm, optimized allow reliable SF6/O2-based reactive ion etching 30 accuracy. find that cross-linking dose 1100 μC/cm2 acceleration voltage combination 180 s °C bake on hot plate 45 development. smallest bars made our dedicated recipe are wide, gaps about difference between designed realized feature size 2 up 700 wide. optical exposure mJ/cm2 same development time produce positive sloped edge profile allowing good step coverage subsequent layers. can be applied, shipped, processed span couple days without notable deterioration patterning quality.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Electron beam lithography on irregular surfaces using an evaporated resist.

An electron beam resist is typically applied by spin-coating, which cannot be reliably applied on nonplanar, irregular, or fragile substrates. Here we demonstrate that the popular negative electron beam resist polystyrene can be coated by thermal evaporation. A high resolution of 30 nm half-pitch was achieved using the evaporated resist. As a proof of concept of patterning on irregular surfaces...

متن کامل

Polystyrene negative resist for high-resolution electron beam lithography

We studied the exposure behavior of low molecular weight polystyrene as a negative tone electron beam lithography (EBL) resist, with the goal of finding the ultimate achievable resolution. It demonstrated fairly well-defined patterning of a 20-nm period line array and a 15-nm period dot array, which are the densest patterns ever achieved using organic EBL resists. Such dense patterns can be ach...

متن کامل

Sub-5 keV Electron-Beam Lithography in Hydrogen Silsesquioxane Resist

We fabricated 9 to 30 nm half-pitch nested Ls and 13 to 15 nm half-pitch dot arrays, using 2 keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the resist. All structures with 15 nm half-pitch and above were fully resolved. We observed that the 9 and 10-nm half-pitch nested L’s and the 13-nm-half-pitch dot array contained some resist residues. We obtained good agreement between...

متن کامل

Deep Ultraviolet Lithography Simulator Tuning by Resist Profile Matching

TCAD simulation is very important for DUV lithography process development and control. Traditional lithography process engineering has relied on short-loop and pilot-lot experiments to understand the effects of particular process control factors. However, experiments are very expensive, and the complexity of lithographic patterns and processes is such that we must often resort to computational ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of vacuum science and technology

سال: 2022

ISSN: ['2166-2746', '2166-2754']

DOI: https://doi.org/10.1116/6.0001918